Samsung announces ‘Shinebolt’ HBM3E memory

Samsung has made several significant memory technology announcements at its annual Memory Tech Day event in San Jose. The company has introduced Shinebolt, its HBM3E memory that offers higher capacity and greater memory bandwidth than previous generations. Samsung is also updating its GDDR7 memory, which features 50% lower stand-by power consumption compared to GDDR6. Additionally, Samsung briefly discussed its plans for HBM4 memory, which will use more advanced fab and packaging technologies. The company expects to ship Shinebolt and GDDR7 in 2024, with non-traditional industries like AI and automotive potentially being early adopters.

https://www.anandtech.com/show/21104/samsung-announces-shinebolt-hbm3e-memory-hbm-hits-36gb-stacks-at-98-gbps

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