In 1966, Robert Dennard invented dynamic random access memory (DRAM), revolutionizing the memory industry. Dennard’s idea condensed RAM into a single transistor, allowing a computer to hold a billion RAM cells on one chip. This innovation led to the development of various DRAM components and modules in technologies like DDR, LPDDR, and HBM, powering the global economy. Over the years, Micron continued to lead the charge in DRAM innovation, from early PC DRAM to the latest 1α node-based DRAM products in 2021, delivering major improvements in density, power consumption, and performance. The company is set to release the 1β production node in 2022 and employ revolutionary EUV lithography for production in 2025.
https://www.micron.com/about/blog/memory/dram/how-dram-changed-the-world